The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2025
Filed:
Nov. 28, 2023
Semes Co., Ltd., Chungcheongnam-do, KR;
Jihoon Park, Chungcheongnam-do, KR;
Wan Jae Park, Chungcheongnam-do, KR;
Seong Gil Lee, Chungcheongnam-do, KR;
Dong Sub Oh, Chungcheongnam-do, KR;
Hye Joon Kheel, Chungcheongnam-do, KR;
Yun Woo Kim, Chungcheongnam-do, KR;
Da Yeong Jeong, Chungcheongnam-do, KR;
SEMES CO., LTD., Chungcheongnam-Do, KR;
Abstract
Disclosed are a method of forming a pattern structure including a silicon nitride. According to the embodiment of the present disclosure, the method of forming a pattern structure includes a step of providing, into a substrate processing apparatus, a substrate having one surface on which a pattern structure including a recess region in which an opening periphery portion and a bottom portion are made of a first silicon nitride is formed, a deposition step of depositing a second silicon nitride on the first silicon nitride, an etching step of etching the second silicon nitride, and a step of performing steps in one cycle n times until the first silicon nitride constituting the bottom portion is removed.