The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2025
Filed:
May. 23, 2023
Disco Corporation, Tokyo, JP;
Hayato Iga, Tokyo, JP;
DISCO CORPORATION, Tokyo, JP;
Abstract
A manufacturing method of a single crystal silicon substrate includes a peeling layer forming step of forming, inside a workpiece, peeling layers that include modified portions and cracks propagating from the modified portions, and a separation step of separating the substrate from the workpiece using the peeling layers as starting points. The peeling layer forming step has a first processing step of forming some of the modified portions in first regions that each extend along a first direction and are separated from one another in a second direction orthogonal to the first direction, and a second processing step of forming the remaining part of the modified portions and the cracks in second regions that each extend along the first direction and that are separated from one another in the second direction.