The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2025
Filed:
Feb. 21, 2023
Soochow University, Suzhou, CN;
Shuao Wang, Suzhou, CN;
Yugang Zhang, Suzhou, CN;
Linwei He, Suzhou, CN;
Long Chen, Suzhou, CN;
Lanhua Chen, Suzhou, CN;
SOOCHOW UNIVERSITY, Suzhou, CN;
Abstract
The invention provides a two-dimensional chalcogenide, which is a crystalline material, and has a chemical formula of (NH)[SnS]·(CHN), cell parameters of a=b=13.2307(10) Å, c=19.335(2) Å, α=β=90°, and γ=120°, and space group of P6/mmc. The invention further provides a method for preparing the two-dimensional chalcogenide and use thereof in the adsorption of iodine vapor. The two-dimensional chalcogenide of the present invention is capable of removing iodine vapor of various concentrations (as low as 400 ppm) over a wide range of temperatures (25° C.-75° C.), without desorption of iodine after standing for a long time.