The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2025
Filed:
Dec. 06, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chung-Hui Chen, Hsinchu, TW;
Weichih Chen, Hsinchu, TW;
Tien-Chien Huang, Hsinchu, TW;
Chien-Chun Tsai, Jhudong Township, TW;
Ruey-Bin Sheen, Taichung, TW;
Tsung-Hsin Yu, Hsinchu, TW;
Chih-Hsien Chang, New Taipei, TW;
Cheng-Hsiang Hsieh, Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A semiconductor structure including first finfet cells and second finfet cells. Each of the first finfet cells has an analog fin boundary according to analog circuit design rules, and each of the second finfet cells has a digital fin boundary according to digital circuit design rules. The semiconductor structure further includes first circuits formed with the first finfet cells, second circuits formed with the second finfet cells, and third circuits formed with one or more of the first finfet cells and one or more of the second finfet cells.