The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2025
Filed:
Nov. 20, 2023
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
National Taiwan University, Taipei, TW;
Yun-Yuan Wang, Kaohsiung, TW;
Chih-Hsiang Hsiao, Taoyuan, TW;
I-Chih Ni, New Taipei, TW;
Chih-I Wu, Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
NATIONAL TAIWAN UNIVERSITY, Taipei, TW;
Abstract
A device includes a substrate, a chalcogenide channel layer, a chalcogenide barrier layer, source/drain contacts, and a gate electrode. The chalcogenide channel layer is over the substrate. The chalcogenide barrier layer is over the chalcogenide channel layer. A dopant concentration of the chalcogenide barrier layer is greater than a dopant concentration of the chalcogenide channel layer. The source/drain contacts are over the chalcogenide channel layer. The gate electrode is over the substrate.