The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2025
Filed:
Mar. 26, 2020
Soitec, Bernin, FR;
Soitec, Bernin, FR;
Abstract
A method for preparing a monodomain thin layer of ferroelectric material comprises: implanting light species in a ferroelectric donor substrate in order to form an embrittlement plane and to define a first layer therein; assembling the donor substrate with a support substrate by means of a dielectric assembly layer; and fracturing the donor substrate at the embrittlement plane. The dielectric assembly layer comprises an oxide having a hydrogen concentration lower than that of the first layer or preventing the diffusion of hydrogen to the first layer, or the dielectric assembly layer comprises a barrier preventing the diffusion of hydrogen to the first layer. A heat treatment of a free face of the first layer is used to diffuse the hydrogen contained therein and cause the multidomain transformation of a surface portion of this first layer, followed by a thinning of the first layer in order to remove the surface portion.