The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2025
Filed:
Feb. 15, 2023
Eugenus, Inc., San Jose, CA (US);
Sung-Hoon Jung, Santa Clara, CA (US);
Niloy Mukherjee, San Ramon, CA (US);
Hee Seok Kim, Seongnam, KR;
Kyu Jin Choi, Seongnam, KR;
Moonsig Joo, Suwon, KR;
Hae Young Kim, San Jose, CA (US);
Yoshikazu Okuyama, Santa Cruz, CA (US);
Nariman Naghibolashrafi, San Jose, CA (US);
Bunsen B. Nie, Fremont, CA (US);
Somilkumar J. Rathi, San Jose, CA (US);
Eugenus, Inc., San Jose, CA (US);
Abstract
The disclosed technology generally relates to forming a titanium nitride layer, and more particularly to forming by atomic layer deposition a titanium nitride layer on a seed layer. In one aspect, a semiconductor structure comprises a semiconductor substrate comprising a non-metallic surface. The semiconductor structure additionally comprises a seed layer comprising silicon (Si) and nitrogen (N) conformally coating the non-metallic surface and a TiN layer conformally coating the seed layer. Aspects are also directed to methods of forming the semiconductor structures.