The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2025
Filed:
Jul. 25, 2022
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 5/14 (2006.01); G06F 1/3234 (2019.01); G06F 1/3296 (2019.01); G11C 7/10 (2006.01); G11C 7/22 (2006.01);
U.S. Cl.
CPC ...
G11C 7/222 (2013.01); G06F 1/3275 (2013.01); G06F 1/3296 (2013.01); G11C 5/14 (2013.01); G11C 7/1048 (2013.01); G11C 7/109 (2013.01);
Abstract
A memory device includes a memory cell for storing data, and a memory controller configured to check whether a dynamic voltage frequency scaling core (DVFSC) operation is used, check information stored in the memory device indicating a setting of the host device in response to the DVFSC operation being used, determine a level of a low voltage used for the DVFSC operation based on the information, and transmit the determined level of the low voltage used for the DVFSC operation to the host device.
Choo, Chul-Hwan. (2025). Memory device and method for managing dynamic voltage frequency scaling operations based on host configuration (U.S. Patent No. 12444450). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12444450
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