The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 14, 2025

Filed:

Mar. 05, 2024
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Xingwei Tang, Wuhan, CN;

Guangchang Ye, Wuhan, CN;

Lu Guo, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 12/02 (2006.01);
U.S. Cl.
CPC ...
G06F 12/0246 (2013.01);
Abstract

Examples of the present application disclose a memory device and operating method thereof, a memory system and operating method thereof, wherein the memory device includes: an array of memory cells; peripheral circuit coupled to the array of memory cells and configured to: obtain the first state corresponding to at least one code word formed by a preset number of memory cells at the target read voltage; perform multiple adjustments to the target read voltage, and obtain a first state corresponding to the at least one of the code words at the read voltage after each of the adjustments respectively; determine a valley voltage in accordance with a variation trend of the relationship of size between the number of flipped bits and the first preset value indicated by a plurality of the obtained first states.


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