Methods for performing voltage sweep operations

Abstract

Methods, systems, and devices for methods for performing voltage sweep operations are described. Based on detecting a failure at a portion of a memory device, the memory system controller may initialize a voltage sweep operation to identify threshold voltages of the memory cells at the portion of the memory device. In one example, the memory system controller may identify and store a value (e.g., a delta value) that represents a difference between a quantity of transitions experienced by a first memory cell at a first voltage iteration and a quantity of transitions experienced by the first memory cell at a second voltage iteration. In another example, the memory system controller may identify the quantity of transitions from a first logic state to a second logic state and a quantity of transitions from the second logic state to a first logic state and store such values in respective memory arrays.