The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2025
Filed:
Jun. 17, 2022
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Feng-Wei Kuo, Hsinchu County, TW;
Chewn-Pu Jou, Hsinchu, TW;
Hsing-Kuo Hsia, Hsinchu County, TW;
Chih-Wei Tseng, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A semiconductor structure is provided. The semiconductor structure includes a dielectric layer, a first waveguide structure, a reflective layer, a semiconductive layer, and a micro-lens. The first waveguide structure is disposed in the dielectric layer and extends along a first direction. The reflective layer is disposed in the dielectric layer and includes an inclined surface configured to redirect an optical signal from a second direction to the first direction. The semiconductive layer is disposed over the dielectric layer. The micro-lens is disposed at the semiconductive layer, wherein an optical signal travels into the semiconductive layer through the micro-lens along the second direction. A method of manufacturing the semiconductor structure is also provided.