The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2025
Filed:
Jul. 20, 2023
Aeluma, Inc., Goleta, CA (US);
Bei Shi, Goleta, CA (US);
Jonathan Klamkin, Goleta, CA (US);
Simone Suran Brunelli, Goleta, CA (US);
Bowen Song, Goleta, CA (US);
Aeluma, Inc., Goleta, CA (US);
Abstract
A method and device for a photodetector circuit using a near infrared (NIR) compliant substrate. The substrate includes a plurality of v-grooves formed within a front region and at least a first GaAs buffer region, a defect filter layer (DFL), and a second GaAs buffer region formed overlying. The device can also include an overlying wavelength configuring material having a graded region with a plurality of material regions configured in order of concentration with respect to at least a first element concentration, which can be configured for a selected wavelength. Then, photodetector device materials can be formed overlying the wavelength configuring material and can include at least an n-type contact region, an absorber region, a p-type spacer region, and a p-type contact region. These device materials can be configured in an array of photomultiplier (PM) devices, single photon avalanche detector (SPAD) devices, or the like.