The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2025
Filed:
Dec. 18, 2020
Applicant:
Ams-osram Ag, Premstaetten, AT;
Inventor:
Ching-Lun Lee, Eindhoven, NL;
Assignee:
ams-OSRAM AG, Premstaetten, AT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/44 (2010.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 31/02 (2006.01); H01L 31/0216 (2014.01); H01L 31/18 (2006.01); H01L 33/00 (2010.01); H01L 33/62 (2010.01); H10F 71/00 (2025.01); H10F 77/00 (2025.01); H10F 77/30 (2025.01); H10H 20/01 (2025.01); H10H 20/84 (2025.01); H10H 20/857 (2025.01);
U.S. Cl.
CPC ...
H10H 20/84 (2025.01); H01L 23/3192 (2013.01); H01L 23/564 (2013.01); H10F 71/129 (2025.01); H10F 77/306 (2025.01); H10F 77/933 (2025.01); H10H 20/01 (2025.01); H10H 20/857 (2025.01); H01L 24/05 (2013.01); H01L 2224/03009 (2013.01); H01L 2224/0391 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05567 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05647 (2013.01); H10H 20/034 (2025.01); H10H 20/0364 (2025.01);
Abstract
A method of forming a sandwich passivation layer () on a semiconductor device () comprising a bond pad () is provided. The method comprises forming a first layer () over a surface of the semiconductor device (), removing a part of the first layer () to expose a surface of the bond pad (), forming a second layer () over the first layer () and the surface of the bond pad (), and forming a third layer () over the second layer (), wherein the surface of the bond pad () is not in contact with the first layer () or third layer ().