The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2025
Filed:
Jun. 24, 2022
Wolfspeed, Inc., Durham, NC (US);
Madankumar Sampath, Morrisville, NC (US);
Sei-Hyung Ryu, Cary, NC (US);
Rahul R. Potera, Apex, NC (US);
Wolfspeed, Inc., Durham, NC (US);
Abstract
A method of forming ohmic contacts on a semiconductor structure having a p-type region and an n-type region includes depositing a first metal on the n-type region, annealing the structure at a first contact anneal temperature to form a first ohmic contact on the n-type region, depositing a second metal on the first ohmic contact and on the p-type region, and annealing the structure at a second contact anneal temperature, less than the first contact anneal temperature, to form a second ohmic contact on the p-type region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile