The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2025
Filed:
Dec. 01, 2022
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Brent A. Anderson, Jericho, VT (US);
Ruilong Xie, Niskayuna, NY (US);
Albert M. Chu, Nashua, NH (US);
Hemanth Jagannathan, Niskayuna, NY (US);
Junli Wang, Slingerlands, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 62/10 (2025.01); H01L 23/528 (2006.01); H10D 30/62 (2025.01); H10D 30/63 (2025.01); H10D 64/27 (2025.01); H10D 84/85 (2025.01);
U.S. Cl.
CPC ...
H10D 62/127 (2025.01); H01L 23/5283 (2013.01); H10D 30/6211 (2025.01); H10D 30/63 (2025.01); H10D 64/512 (2025.01); H10D 84/853 (2025.01);
Abstract
A semiconductor structure including a vertical semiconductor channel region, a bottom source drain region arranged on a substrate at a bottom of the vertical semiconductor channel region, a metal gate disposed around the vertical semiconductor channel region, where a first portion of the metal gate extends above the vertical semiconductor channel region, and a gate contact entirely above the vertical semiconductor channel region.