logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12439660 B1

PDFFull Text
Date of Patent:
Oct. 07, 2025

Filed:

Dec. 01, 2022

Vertical transistor with reduced cell height

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Brent A. Anderson, Jericho, VT (US);

Ruilong Xie, Niskayuna, NY (US);

Albert M. Chu, Nashua, NH (US);

Hemanth Jagannathan, Niskayuna, NY (US);

Junli Wang, Slingerlands, NY (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorney:

L. Jeffrey Kelly

Primary Examiner:

Khaja Ahmad

Assistant Examiner:

Khatib A Rahman

Int. Cl.
CPC ...
H10D 62/10 (2025.01); H01L 23/528 (2006.01); H10D 30/62 (2025.01); H10D 30/63 (2025.01); H10D 64/27 (2025.01); H10D 84/85 (2025.01);
U.S. Cl.
CPC ...
H10D 62/127 (2025.01); H01L 23/5283 (2013.01); H10D 30/6211 (2025.01); H10D 30/63 (2025.01); H10D 64/512 (2025.01); H10D 84/853 (2025.01);
Abstract

A semiconductor structure including a vertical semiconductor channel region, a bottom source drain region arranged on a substrate at a bottom of the vertical semiconductor channel region, a metal gate disposed around the vertical semiconductor channel region, where a first portion of the metal gate extends above the vertical semiconductor channel region, and a gate contact entirely above the vertical semiconductor channel region.

Find Patent Forward Citations

Anderson, Brent. (2025). Vertical transistor with reduced cell height (U.S. Patent No. 12439660). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12439660

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…