The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2025
Filed:
Mar. 15, 2022
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H10B 12/00 (2023.01); H10D 30/67 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6713 (2025.01); H10B 12/31 (2023.02); H10D 30/6728 (2025.01);
Abstract
A transistor comprises a pair of source/drain regions having a channel region there-between. A gate is adjacent the channel region with a gate insulator being between the gate and the channel region. A fixed-charge material is adjacent the source/drain regions. Insulating material is between the fixed-charge material and the source/drain regions. The insulating material and the fixed-charge material comprise different compositions relative one another. The fixed-charge material has charge density of at least 1×10charges/cm.