The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2025
Filed:
Jun. 01, 2022
Micron Technology, Inc., Boise, ID (US);
John Hopkins, Meridian, ID (US);
Jordan D. Greenlee, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Methods, systems, and devices for self-aligned etching techniques for memory formation are described. A memory device may include a stack of alternating materials and a pillar extending through the stack of alternating materials, where the stack of alternating materials and the pillar may form a set of multiple memory cells. A polysilicon material may be formed above the pillar, where the polysilicon material may be associated with a selector device for the memory cells. A masking material may be formed above the polysilicon material and the stack of alternating materials, where the masking material may be aligned with the polysilicon material and may have a width that is greater than a width of the polysilicon material and the pillar. The masking material may prevent the polysilicon material, the pillar, and a portion of the stack of alternating materials beneath the masking material from being removed during an etching operation.