The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2025
Filed:
Dec. 20, 2022
Fuji Electric Co., Ltd., Kawasaki, JP;
Kaname Mitsuzuka, Matsumoto, JP;
Tohru Shirakawa, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Abstract
Provided is a semiconductor device including a gate trench portion and a first trench portion adjacent to the gate trench portion. The device may include a first conductivity type drift region provided in a semiconductor substrate, a second conductivity type base region provided above the drift region, a first conductivity type emitter region provided above the base region and having a doping concentration higher than that of the drift region, and a second conductivity type contact region provided above the base region and having a doping concentration higher than that of the base region. The contact region includes a first contact portion provided on a front surface of the substrate, and a second contact portion having a doping concentration different from that of the first contact portion and provided alternately with the first contact portion in a trench extending direction on a side wall of the first trench portion.