The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2025
Filed:
Jan. 06, 2023
Applicant:
Changxin Memory Technologies, Inc., Anhui, CN;
Inventors:
Daohuan Feng, Hefei, CN;
Xiaojie Li, Hefei, CN;
Assignee:
Changxin Memory Technologies, Inc., Hefei, CN;
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/056 (2023.02);
Abstract
A semiconductor structure manufacturing method includes: providing a substrate and forming a groove in the substrate; forming a barrier layer on a sidewall of the groove; epitaxially growing a channel material from a bottom of the groove to form an intermediate structure in the groove; and removing a portion of the intermediate structure and a portion of the substrate to form a fin structure.
Quick Actions:
Feng, Daohuan. (2025). Semiconductor structure manufacturing method and semiconductor structure (U.S. Patent No. 12439583). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12439583
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile