The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 07, 2025

Filed:

Mar. 21, 2023
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventor:

Chia-Chen Sun, Kaohsiung, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 10/00 (2023.01);
U.S. Cl.
CPC ...
H10B 10/12 (2023.02);
Abstract

A method for fabricating a static random access memory (SRAM) includes the steps of forming a first fin-shaped structure for a first pull-down (PD) transistor on a substrate, forming a second fin-shaped structure for a second PD transistor on the substrate, forming a third fin-shaped structure for a first pass gate (PG) transistor on the substrate, and forming a fourth fin-shaped structure for a second PG transistor on the substrate. Preferably, the first fin-shaped structure and the second fin-shaped structure include a first recess therebetween and the third fin-shaped structure and the fourth fin-shaped structure include no recess therebetween.


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