The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 07, 2025

Filed:

May. 11, 2022
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Sagarika Mukesh, Albany, NY (US);

Nikhil Jain, Albany, NY (US);

Devika Sarkar Grant, Amsterdam, NY (US);

Ruilong Xie, Niskayuna, NY (US);

Kisik Choi, Watervliet, NY (US);

Prabudhya Roy Chowdhury, Albany, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H10D 30/67 (2025.01); H10D 62/17 (2025.01); H10D 64/23 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 62/10 (2025.01);
U.S. Cl.
CPC ...
H01L 23/5286 (2013.01); H01L 21/76897 (2013.01); H01L 23/5226 (2013.01); H10D 30/6757 (2025.01); H10D 62/378 (2025.01); H10D 64/254 (2025.01); H10D 84/0149 (2025.01); H10D 84/017 (2025.01); H10D 84/038 (2025.01); H10D 62/121 (2025.01);
Abstract

According to the embodiment of the present invention, a semiconductor device includes a first source/drain and a second source/drain. A first source/drain contact includes a first portion and a second portion. The first portion of the first source/drain contact is located directly atop the first source/drain. The second portion of the first source/drain contact extends vertically past the first source/drain. The first source/drain is in direct contact with three different sides of a first section of the second portion of the first source/drain contact.


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