The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2025
Filed:
Apr. 14, 2022
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76832 (2013.01); H01L 23/5226 (2013.01); H01L 23/5329 (2013.01);
Abstract
A semiconductor device includes a first conductive feature, a first dielectric layer over the first conductive feature, a second conductive feature extending through the first dielectric layer, an air gap between the first dielectric layer and the second conductive feature, and an etch stop layer over the second conductive feature and the first dielectric layer. The etch stop layer covers the air gap, and the air gap extends above a bottommost surface of the etch stop layer.