The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2025
Filed:
Apr. 06, 2021
Tokyo Electron Limited, Tokyo, JP;
Imec Vzw, Leuven, BE;
TOKYO ELECTRON LIMITED, Tokyo, JP;
IMEC VZW, Leuven, BE;
Abstract
In certain embodiments, a method includes forming a first etch stop layer on a first metallization layer of a semiconductor substrate. The method further includes forming, prior to forming a second metallization layer over the first metallization layer, an opening in the first etch stop layer according to a supervia mask. The method further includes forming the second metallization layer over the first metallization layer and forming a second etch stop layer on the second metallization layer. The method further includes forming, prior to forming a third metallization layer over the second metallization layer, an opening in the second etch stop layer according to the supervia mask. The method further includes forming the third metallization layer over the second metallization layer and etching a supervia opening from the third metallization layer to the first metallization layer according to the supervia mask.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile