The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2025
Filed:
Jun. 10, 2022
Infineon Technologies Ag, Neubiberg, DE;
Moriz Jelinek, Villach, AT;
Thomas Waechtler, Chemnitz, DE;
Bernd Bitnar, Bannewitz, DE;
Daniel Schloegl, Villach, AT;
Hans-Joachim Schulze, Taufkirchen, DE;
Oana Julia Spulber, Neubiberg, DE;
Benedikt Stoib, Feldkirchen-Westerham, DE;
Christian Krueger, Liegau-Augustusbad, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A semiconductor device includes: an n-doped drift region between first and second surfaces of a semiconductor body; a p-doped first region at the second surface; and an n-doped field stop region between the drift and first region. The field stop region includes first and second sub-regions with hydrogen related donors. A p-n junction separates the first region and first sub-region. A concentration of the hydrogen related donors, along a first vertical extent of the first sub-region, steadily increases from the pn-junction to a maximum value, and steadily decreases from the maximum value to a reference value at a first transition between the sub-regions. A second vertical extent of the second sub-region ends at a second transition to the drift region where the concentration of hydrogen related donors equals 10% of the reference value. A maximum concentration value in the second sub-region is at most 20% larger than the reference value.