The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 07, 2025

Filed:

Nov. 27, 2023
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

You-Liang Chou, Taichung, TW;

Wen-Jer Tsai, Hualien, TW;

Chun-Chang Lu, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/02 (2006.01); G11C 8/08 (2006.01); G11C 29/52 (2006.01);
U.S. Cl.
CPC ...
G11C 29/022 (2013.01); G11C 8/08 (2013.01); G11C 29/52 (2013.01); G11C 29/021 (2013.01);
Abstract

A memory device and a reading method thereof are provided. The memory device at least includes a first word line, a second word line and a third word line. The reading method includes the following steps. A read procedure is executed to read a plurality of memory cells connected to the first word line. A recognition procedure is executed in response to at least one memory cell has an error. A re-read procedure is executed on the memory cell. The recognition procedure includes: applying a pass voltage to the first word line; applying a recognition voltage to at least one of the second word line and the third word line. The re-read procedure including: applying a second read voltage to the first word line; and applying a second pass voltage to the second word line and a third pass voltage to the third word line.


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