The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2025
Filed:
May. 21, 2021
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 7/004 (2006.01); G03F 7/038 (2006.01); G03F 7/039 (2006.01); G03F 7/11 (2006.01); G03F 7/16 (2006.01); G03F 7/20 (2006.01); G03F 7/30 (2006.01); G03F 7/38 (2006.01); G03F 7/42 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0044 (2013.01); G03F 7/038 (2013.01); G03F 7/039 (2013.01); G03F 7/11 (2013.01); G03F 7/162 (2013.01); G03F 7/168 (2013.01); G03F 7/30 (2013.01); G03F 7/38 (2013.01); G03F 7/42 (2013.01); H01L 21/0274 (2013.01); G03F 7/2004 (2013.01);
Abstract
A method of forming a photoresist pattern includes forming a protective layer over a photoresist layer formed on a substrate, and selectively exposing the protective layer and the photoresist layer to actinic radiation. The protective layer and the photoresist layer are developed to form a pattern in the photoresist layer, and the protective layer is removed. The protective layer includes a polymer having pendant fluorocarbon groups and pendant acid leaving groups.