The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2025
Filed:
Jul. 13, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventor:
Chao-I Wu, Zhubei, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 63/00 (2023.01); H10N 70/00 (2023.01); G11C 13/00 (2006.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10N 70/8413 (2023.02); H10B 63/20 (2023.02); H10B 63/80 (2023.02); H10B 63/84 (2023.02); G11C 13/0004 (2013.01); H10N 70/063 (2023.02); H10N 70/066 (2023.02); H10N 70/231 (2023.02); H10N 70/826 (2023.02); H10N 70/8828 (2023.02);
Abstract
A memory device includes the following items. A substrate. A bottom electrode disposed over the substrate. An insulating layer disposed over the bottom electrode, the insulating layer having a through hole defined in the insulating layer. A heater disposed in the through hole. A phase change material layer disposed over the heater. A selector layer disposed over the phase change material layer. An intermediate layer disposed over the through hole. Also, a metal layer disposed over the selector layer. The metal layer is wider than the phase change material layer.