The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2025
Filed:
Jul. 22, 2022
International Business Machines Corporation, Armonk, NY (US);
Koichi Motoyama, Clifton Park, NY (US);
Oscar Van Der Straten, Guilderland Center, NY (US);
Chih-Chao Yang, Glenmont, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Embodiments of present invention provide a method of forming a MRAM structure. The method includes forming a bottom electrode layer surrounded by a bottom dielectric layer; forming an etch-stop layer on top of the bottom electrode layer and the bottom dielectric layer; creating an opening in the etch-stop layer to expose a top surface of the bottom electrode layer; forming a first ferromagnetic layer on top of the bottom electrode layer and the etch-stop layer, with a portion of the first ferromagnetic layer filling the opening in the etch-stop layer; forming a tunnel barrier layer and a second ferromagnetic layer on top of the first ferromagnetic layer; patterning the second ferromagnetic layer, the tunnel barrier layer, and the first ferromagnetic layer; and forming a top electrode layer on top of the second ferromagnetic layer. A structure formed thereby is also provided.