The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2025
Filed:
May. 13, 2022
Applicant:
Infineon Technologies Austria Ag, Villach, AT;
Inventor:
Thomas Feil, Villach, AT;
Assignee:
Infineon Technologies Austria AG, Villach, AT;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 84/80 (2025.01); H10D 1/47 (2025.01); H10D 1/68 (2025.01); H10D 30/01 (2025.01); H10D 30/66 (2025.01); H10D 64/00 (2025.01);
U.S. Cl.
CPC ...
H10D 84/811 (2025.01); H10D 1/47 (2025.01); H10D 1/692 (2025.01); H10D 30/0291 (2025.01); H10D 30/66 (2025.01); H10D 64/117 (2025.01);
Abstract
The disclosure relates to a semiconductor die, including a vertical power transistor device, a pull-down transistor device, and a capacitor. The pull-down transistor device is connected between a gate electrode of the vertical power transistor device and a ground terminal and connects the gate electrode to the ground terminal in a conducting state. The capacitor is connected between one of the load terminals of the vertical power transistor device and the control terminal of the pull-down transistor device and capacitively couples the one load terminal to the control terminal.