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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12433004 B1

PDFFull Text
Date of Patent:
Sep. 30, 2025

Filed:

Jul. 07, 2022

Semiconductor device having conductive portions in a groove and contacting a gate insulating layer

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Kyo-Suk Chae, Suwon-si, KR;

Dongsik Kong, Hwaseong-si, KR;

Youngwook Park, Osan-si, KR;

Jihoon Kim, Gwacheon-si, KR;

Myung-Hyun Baek, Seoul, KR;

Ju Hyung We, Hwaseong-si, KR;

Jun-Bum Lee, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Attorney:

Wolf, Greenfield & Sacks, P.C.

Primary Examiner:

Younes Boulghassoul

Int. Cl.
CPC ...
H10D 64/27 (2025.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/321 (2006.01); H01L 21/762 (2006.01); H01L 21/768 (2006.01); H10B 12/00 (2023.01); H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
H10D 64/513 (2025.01); H01L 21/02112 (2013.01); H01L 21/30604 (2013.01); H01L 21/321 (2013.01); H01L 21/76224 (2013.01); H01L 21/76829 (2013.01); H10B 12/053 (2023.02); H10B 12/34 (2023.02); H10B 12/48 (2023.02); H01L 21/3105 (2013.01); H10B 12/315 (2023.02);
Abstract

Disclosed are a semiconductor device and a method of fabricating the same. The semiconductor device may include a substrate having a groove therein extending in a first direction, a gate insulating layer in the groove, a first conductive pattern in the groove and on the gate insulating layer, and a word line capping pattern in the groove and on the first conductive pattern. The first conductive pattern may include a first material and may include a first conductive portion adjacent to the word line capping pattern and a second conductive portion adjacent to a bottom end of the groove. A largest dimension of a grain of the first material of the first conductive portion may be equal to or larger than that of the first material of the second conductive portion.

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