The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2025
Filed:
Nov. 13, 2024
Globalfoundries U.s. Inc., Malta, NY (US);
Rainer Thoma, Jeffersonville, VT (US);
Oscar D. Restrepo, Clifton Park, NY (US);
Zhong-Xiang He, Essex, VT (US);
Ajay Raman, Essex Junction, VT (US);
GlobalFoundries U.S. Inc., Malta, NY (US);
Abstract
A structure includes a transistor, e.g., HEMT, with a field plate positioned laterally to a side of an active gate and including a first portion extending over the active gate. A dielectric layer isolates a lower surface of the first portion from an upper surface of the active gate. A field plate contact includes interconnect layers located directly over the active gate and electrically coupled to the first portion directly over the active gate. The field plate contact allows electrical operation of the field plate, but also acts as a thermally conductive path from the active gate through the interconnect layers to cool likely hot spots within the transistor.