The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 30, 2025

Filed:

May. 10, 2024
Applicant:

Winbond Electronics Corp., Taichung, TW;

Inventors:

Che-Jui Hsu, Taichung, TW;

Ying-Fu Tung, Taichung, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 64/01 (2025.01); H10D 30/01 (2025.01); H10D 30/68 (2025.01);
U.S. Cl.
CPC ...
H10D 64/035 (2025.01); H10D 30/0411 (2025.01); H10D 30/681 (2025.01); H10D 30/6894 (2025.01);
Abstract

A semiconductor structure is provided. The semiconductor structure includes a pad layer, a first conductive layer, a second conductive layer, an interlayer dielectric layer, and a control gate. The pad layer is disposed on a substrate. The first conductive layer is disposed on the pad layer. The second conductive layer is disposed on the first conductive layer. The interlayer dielectric layer is disposed on the first conductive layer and the second conductive layer and is in contact with top surfaces of the first conductive layer and the second conductive layer. The control gate is disposed on the interlayer dielectric layer.


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