The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2025
Filed:
Jun. 08, 2022
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Da-Jun Lin, Kaohsiung, TW;
Fu-Yu Tsai, Tainan, TW;
Bin-Siang Tsai, Changhua County, TW;
Chung-Yi Chiu, Tainan, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 62/85 (2025.01); H01L 21/285 (2006.01); H10D 30/01 (2025.01); H10D 30/47 (2025.01); H10D 62/824 (2025.01); H10D 64/01 (2025.01); H10D 64/62 (2025.01);
U.S. Cl.
CPC ...
H10D 62/85 (2025.01); H01L 21/28575 (2013.01); H10D 30/015 (2025.01); H10D 30/475 (2025.01); H10D 62/824 (2025.01); H10D 62/8503 (2025.01); H10D 64/01 (2025.01); H10D 64/62 (2025.01);
Abstract
A compound semiconductor device includes a substrate, a channel layer on the substrate, a barrier layer on the channel layer, a passivation layer on the barrier layer, and a contact area recessed into the passivation layer and the barrier layer. The channel layer is partially exposed at a bottom of the contact area. A bi-layer silicide film is disposed on the contact area. A copper contact is disposed on the bi-layer silicide film.