Iii-v compound semiconductor field-effect transistor gate structure comprising a field plate with curved sidewalls and manufacturing method thereof

Abstract

A semiconductor device includes a substrate, a III-V compound semiconductor layer, a gate structure, a drain structure, and a field plate. The III-V compound semiconductor layer is disposed on the substrate. The gate structure, the drain structure, and the field plate are disposed above the III-V compound semiconductor layer. The field plate is located between the gate structure and the drain structure. The field plate includes a first curved sidewall located at an edge of the field plate adjacent to the drain structure. The first curved sidewall of the field plate may be used to improve electric field distribution in the semiconductor device, and electrical performance of the semiconductor device may be enhanced accordingly.