The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 30, 2025

Filed:

Feb. 09, 2023
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Da-Jun Lin, Kaohsiung, TW;

Bin-Siang Tsai, Changhua County, TW;

Fu-Yu Tsai, Tainan, TW;

Chung-Yi Chiu, Tainan, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 1/68 (2025.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H10D 84/60 (2025.01); H10D 84/80 (2025.01);
U.S. Cl.
CPC ...
H10D 1/692 (2025.01); H01L 21/28556 (2013.01); H01L 21/76843 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); H01L 23/53228 (2013.01); H01L 23/53295 (2013.01); H10D 84/611 (2025.01); H10D 84/811 (2025.01);
Abstract

An MIM capacitor structure includes numerous inter-metal dielectrics. A trench is embedded within the inter-metal dielectrics. A capacitor is disposed within the trench. The capacitor includes a first electrode layer, a capacitor dielectric layer and a second electrode layer. The first electrode layer, the capacitor dielectric layer and the second electrode layer fill in and surround the trench. The capacitor dielectric layer is between the first electrode layer and the second electrode layer. A silicon oxide liner surrounds a sidewall of the trench and contacts the first electrode layer.


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