The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 30, 2025

Filed:

Jun. 01, 2022
Applicants:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

National Yang Ming Chiao Tung University, Hsinchu, TW;

Inventors:

Hsin-Cheng Lin, Taipei, TW;

Chia-Che Chung, Hsinchu, TW;

Chee-Wee Liu, Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 1/00 (2025.01); H01L 23/522 (2006.01); H10B 12/00 (2023.01); H10D 1/68 (2025.01);
U.S. Cl.
CPC ...
H10D 1/042 (2025.01); H01L 23/5223 (2013.01); H10B 12/03 (2023.02); H10B 12/0335 (2023.02); H10D 1/043 (2025.01); H10D 1/714 (2025.01); H10D 1/716 (2025.01);
Abstract

The method includes forming a sacrificial multi-layer stack including alternating first sacrificial layers and second sacrificial layers stacked in a vertical direction on a substrate; removing the first sacrificial layers to form first spaces each interposing two of the second sacrificial layers; depositing a first dielectric layer and a first electrode material in the first spaces; removing the second sacrificial layers to form second spaces each interposing two portions of the first electrode material; depositing a second dielectric layer and a second electrode material in the second spaces.


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