The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2025
Filed:
May. 26, 2022
Changxin Memory Technologies, Inc., Hefei, CN;
Jun Xia, Hefei, CN;
Shijie Bai, Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
A method for manufacturing a semiconductor structure comprises: forming a stacked structure on a base having an array area and a peripheral area; forming a first mask layer on the stacked structure, in which the first mask layer corresponding to the array area has a first pattern; ion doping the first mask layer on the array area to obtain a doped first mask layer; and etching the stacked structure through the doped first mask layer to transfer the first pattern to the stacked structure.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile