The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 30, 2025

Filed:

Jun. 23, 2022
Applicants:

Changxin Memory Technologies, Inc., Hefei, CN;

Beijing Superstring Academy of Memory Technology, Beijing, CN;

Inventors:

Xiaoguang Wang, Hefei, CN;

Dinggui Zeng, Hefei, CN;

Huihui Li, Hefei, CN;

Kanyu Cao, Hefei, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 61/00 (2023.01); H10D 30/67 (2025.01); H10D 99/00 (2025.01); H10N 50/01 (2023.01);
U.S. Cl.
CPC ...
H10B 61/22 (2023.02); H10D 30/6728 (2025.01); H10D 30/6755 (2025.01); H10D 99/00 (2025.01); H10N 50/01 (2023.02);
Abstract

The present disclosure provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a substrate. A plurality of vertical transistors arranged in an aligned manner are formed on the substrate, wherein a channel material of the vertical transistor includes an oxide semiconductor. A plurality of staggered contact pads connected to upper ends of the vertical transistors are formed on the vertical transistors, wherein a single contact pad is connected to the upper ends of an even number of vertical transistors. A magnetic tunnel junction is formed on the contact pad.


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