The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 30, 2025

Filed:

Nov. 30, 2022
Applicant:

Winbond Electronics Corp., Taichung, TW;

Inventors:

Tzu-Yun Huang, Taichung, TW;

Chun-Hsu Chen, Taichung, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H10B 41/30 (2023.01); H10D 30/01 (2025.01);
U.S. Cl.
CPC ...
H10B 41/30 (2023.02); H10D 30/0243 (2025.01);
Abstract

A non-volatile memory structure includes a substrate and a gate stack layer over the substrate. The gate stack layer includes an active pattern and a rail block. The active pattern includes several first active stacks and several second active stacks. The first active stacks and the second active stacks are arranged separately in the first direction, and they extend in the second direction. The second direction is different from the first direction. The rail block extends in the first direction. The rail block has a first side and a second side. The second side is opposite the first side. The first active stacks connect the first side of the rail block. The second active stacks connect the second side of the rail block. Also, the first side of the rail block includes several first protruding portions arranged separately in the first direction.


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