The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2025
Filed:
Sep. 08, 2022
Changxin Memory Technologies, Inc., Anhui, CN;
Xiaojie Li, Hefei, CN;
Changxin Memory Technologies, Inc., Hefei, CN;
Abstract
The semiconductor structure forming method includes: providing a base, where the base includes a substrate, a plurality of first semiconductor layers and second semiconductor layers; forming a first sidewall and a second sidewall, each including a support layer and an isolation layer formed on a side of the support layer; forming a plurality of recessed portions separated by the first sidewall, the second sidewall, and the second semiconductor layers, where the recessed portions extend in a horizontal direction and are stacked in a vertical direction; forming a first conductive layer and a filling layer in each recessed portion; removing isolation layers located on a side of the first sidewall that is away from the second sidewall and on a side of the second sidewall that is away from the first sidewall; and removing the first conductive layer located at a bottom of each recessed portion.