Method for forming three-dimensional semiconductor structure and semiconductor structure made thereof

Abstract

This invention relates to a semiconductor structure and a method for forming the semiconductor structure. The method for forming a semiconductor structure includes the following steps: forming a stacking layer on a top surface of a substrate, where the stacking layer includes a plurality of semiconductor layers arranged at intervals in a first direction, and the stacking layer includes a transistor region, a capacitor region, and a bit line region, where the semiconductor layers include semiconductor columns arranged at intervals in a third direction; forming, in the capacitor region, a capacitor extending in the second direction; forming a word line in the transistor region, where the word line extends in the third direction and continuously covers the semiconductor columns arranged at intervals in the third direction; and forming a bit line in the bit line region, where the bit line extends in the first direction.