The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 30, 2025

Filed:

Jun. 30, 2021
Applicant:

Celestial Ai Inc., Santa Clara, CA (US);

Inventor:

Hua Yang, Cork, IE;

Assignee:

Celestial AI Inc., Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/22 (2006.01); G02F 1/025 (2006.01); H01S 5/042 (2006.01); H01S 5/30 (2006.01); H10F 71/00 (2025.01); H10F 77/124 (2025.01); H10F 77/14 (2025.01);
U.S. Cl.
CPC ...
H01S 5/22 (2013.01); G02F 1/025 (2013.01); H01S 5/0421 (2013.01); H01S 5/305 (2013.01); H10F 71/127 (2025.01); H10F 77/124 (2025.01); H10F 77/147 (2025.01);
Abstract

A method of fabricating an optoelectronic component, performed on a multi-layered wafer disposed on a substrate. The method comprises the steps of: etching the multi-layered wafer, thereby defining a slab and a multi-layered ridge, the slab having an upper surface below the ridge and being located between the multi-layered ridge and the substrate; selectively epitaxially growing a III-V semiconductor cladding adjacent to a first and second sidewall of the ridge, the cladding layer extending from the upper surface of the slab along the first and second sidewalls, and thereby cladding an optically active waveguide within the multi-layered ridge; and providing a first and second electrical contact, which electrically connect to a layer of the multi-layered ridge and the slab respectively.


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