The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2025
Filed:
Feb. 11, 2022
International Business Machines Corporation, Armonk, NY (US);
Shogo Mochizuki, Mechanicville, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Juntao Li, Cohoes, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A stacked semiconductor device includes a lower semiconductor device that has a backside and includes a flipped upper semiconductor device that has a backside that is opposed to the lower semiconductor device backside. The flipped upper semiconductor device further includes a backside residual semiconductor on insulator (SOI) layer and a stressed dielectric portion thereupon. The stacked semiconductor device may be formed by stacking and bonding the flipped upper semiconductor device to the lower semiconductor device, removing one or more semiconductor on insulator (SOI) layers from the backside of the flipped upper semiconductor device while retaining an exposed backside residual SOI layer of the flipped upper semiconductor device, forming a stressed dielectric layer upon the exposed backside residual SOI layer, and patterning the stressed dielectric layer.