The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 30, 2025

Filed:

May. 26, 2022
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventor:

Fatma Arzum Simsek-Ege, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 25/065 (2023.01); G11C 11/408 (2006.01); H10B 12/00 (2023.01); H10B 41/23 (2023.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H01L 25/0652 (2013.01); G11C 11/4087 (2013.01); H10B 12/315 (2023.02); H10B 41/23 (2023.02); H10B 43/27 (2023.02);
Abstract

A microelectronic device includes a first microelectronic device structure including a memory array region comprising memory cells and a second microelectronic device structure vertically overlying the first microelectronic device structure. The second microelectronic device structure includes control logic devices configured to effectuate at least a portion of control operations for the memory cells and first multi-capacitor structures within spaces between the control logic devices and horizontally neighboring at least one of the control logic devices. The first multi-capacitor structures span a same or fewer number of routing tiers as the control logic devices and are configured to regulate and supply voltage to one or more of the control logic devices.


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