The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 30, 2025

Filed:

Jul. 19, 2022
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventors:

Xin Xin, Hefei, CN;

Jinghao Wang, Hefei, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H01L 21/3205 (2006.01); H01L 21/3213 (2006.01); H01L 21/3215 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32139 (2013.01); H01L 21/32055 (2013.01); H01L 21/32155 (2013.01); H10B 12/485 (2023.02);
Abstract

Embodiments provide a method for fabricating a contact structure and a contact structure. The method for fabricating a contact structure includes: providing a substrate, and sequentially arranging a first polysilicon layer and a first mask layer on a surface of the substrate; performing a first etching process on the first polysilicon layer and the first mask layer to form a stepped structure where a width of the first mask layer is smaller than a width of the first polysilicon layer; performing a second etching process on the substrate by using the first polysilicon layer as a mask to form a trench; depositing a second polysilicon layer in the trench, a top of the second polysilicon layer being not higher than a bottom of the first mask layer; and performing an annealing process to form the contact structure.


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