The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 30, 2025

Filed:

Jun. 26, 2023
Applicant:

Radpion Inc., Daejeon, KR;

Inventors:

Myung Jin Kim, Daejeon, KR;

Jae Keun Kil, Gumi-si, KR;

Bom Sok Kim, Seoul, KR;

Assignee:

Radpion Inc., Daejeon, KR;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/317 (2006.01); H01J 37/16 (2006.01); H01J 37/18 (2006.01); H01J 37/20 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3171 (2013.01); H01J 37/16 (2013.01); H01J 37/18 (2013.01); H01J 37/20 (2013.01); H01J 2237/202 (2013.01);
Abstract

A material surface reforming apparatus using ion implantation includes: a vacuum chamber unit that has an internal space in which vacuum is selectively maintained, and has a station for placing a material that is a surface reforming target in the internal space; a first ion implanter that is mounted at the upper portion of the vacuum chamber unit, creates plasma composed of ionized gas particles or metal particles, and emits a first ion beam toward the material placed on the station by applying a voltage to the created plasma; and a second ion implanter that is mounted at the upper portion of the vacuum chamber unit, creates plasma composed of ionized gas particles or metal particles, and emits a second ion beam toward the material placed on the station by applying a voltage to the created plasma.


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