The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2025
Filed:
Nov. 23, 2021
United Microelectronics Corp., Hsin-Chu, TW;
Hsiang-Wen Ke, Kaohsiung, TW;
Wei-Chuan Tsai, Changhua County, TW;
Yen-Tsai Yi, Tainan, TW;
Jin-Yan Chiou, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method for fabricating a semiconductor device includes the steps of forming an inter-metal dielectric (IMD) layer on a substrate, forming a trench in the IMD layer, forming a barrier layer in the trench, forming a nucleation layer on the barrier layer, performing an anneal process to form a silicide layer, forming a bulk layer on the silicide layer, and forming a magnetic tunneling junction (MTJ) on the bulk layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile