The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 23, 2025

Filed:

Aug. 28, 2023
Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;

Inventors:

Shunpei Yamazaki, Tokyo, JP;

Jun Koyama, Kanagawa, JP;

Kiyoshi Kato, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H10B 10/00 (2023.01); H10B 12/00 (2023.01); H10B 41/00 (2023.01); H10B 41/30 (2023.01); H10B 41/70 (2023.01); H10D 30/67 (2025.01); H10D 62/80 (2025.01); H10D 84/90 (2025.01); H10D 86/01 (2025.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01); G11C 16/04 (2006.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
H10D 86/60 (2025.01); H10B 10/00 (2023.02); H10B 10/125 (2023.02); H10B 12/00 (2023.02); H10B 12/05 (2023.02); H10B 12/30 (2023.02); H10B 41/00 (2023.02); H10B 41/30 (2023.02); H10B 41/70 (2023.02); H10D 30/6755 (2025.01); H10D 62/80 (2025.01); H10D 84/903 (2025.01); H10D 86/01 (2025.01); H10D 86/423 (2025.01); H10D 86/481 (2025.01); G11C 16/0433 (2013.01); G11C 16/26 (2013.01);
Abstract

An object of the present invention is to provide a semiconductor device having a novel structure in which in a data storing time, stored data can be stored even when power is not supplied, and there is no limitation on the number of writing. A semiconductor device includes a first transistor including a first source electrode and a first drain electrode; a first channel formation region for which an oxide semiconductor material is used and to which the first source electrode and the first drain electrode are electrically connected; a first gate insulating layer over the first channel formation region; and a first gate electrode over the first gate insulating layer. One of the first source electrode and the first drain electrode of the first transistor and one electrode of a capacitor are electrically connected to each other.


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