The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2025
Filed:
Apr. 20, 2023
Applicant:
Wolfspeed, Inc., Durham, NC (US);
Inventors:
Sei-Hyung Ryu, Cary, NC (US);
Thomas E. Harrington, Iii, Durham, NC (US);
Assignee:
Wolfspeed, Inc., Durham, NC (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 64/00 (2025.01); H10D 64/27 (2025.01);
U.S. Cl.
CPC ...
H10D 64/519 (2025.01); H10D 64/115 (2025.01);
Abstract
Power semiconductor devices include a semiconductor layer structure comprising an active area with a plurality of unit cell transistors and an inactive gate pad area, a gate resistor layer on an upper side of the semiconductor layer structure, an inner contact that is directly on the upper side of the gate resistor layer, and an outer contact that is directly on the upper side of the gate resistor layer. The outer contact encloses the inner contact within the inactive gate pad area of the semiconductor device.