The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2025
Filed:
Sep. 19, 2022
Changxin Memory Technologies, Inc., Hefei, CN;
Yi Tang, Hefei, CN;
Jianfeng Xiao, Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
Embodiments of the present disclosure relate to the field of semiconductors, and provide a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: an active pillar, where the active pillar includes: a channel region, as well as a first doped region and a second doped region located at two sides of the channel region, the channel region, the first doped region, and the second doped region having a same doping type, where a counter-doped region is arranged in the channel region, the counter-doped region is close to the first doped region, and a doping type of the counter-doped region is different from a doping type of the channel region; and a gate, where the gate surrounds a part of the channel region, and in a plane in which an axis of the active pillar is located, projection of the gate partially overlaps with projection of the counter-doped region.